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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. LDTA114YET1 3 1 2 SC-89 Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-89 Package can be Soldered using Wave or Reflow. Available in 8 mm, 7 inch/3000 Unit Tape & Reel This is Pb-Free Device. Pin 1 Base (Input) R1 R2 Pin 3 Collector (Output) Pin 2 Emitter (Ground) DEVICE MARKING AND ORDERING INFORMATION Device LDTA114YET1 Marking 6D Package SC-89 (Pb-Free) Shipping 3000/Tape&Reel MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 3 XX M 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 200 (Note 1) 300 (Note 2) 1.6 (Note 1) 2.4 (Note 2) 600 (Note 1) 400 (Note 2) -55 to +150 Unit mW xx M = Specific Device Code = Date Code mW/C C/W C RJA TJ, Tstg Version 1.0 LDTA114YET1-1/4 LESHAN RADIO COMPANY, LTD. LDTA114YET1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0 ) Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ICBO ICEO IEBO V(BR)CBO V(BR)CEO - - - 50 50 - - - - - 100 500 0.2 - - nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) Input Resistor Resistor Ratio 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% hFE VCE(sat) VOL VOH R1 R1/R2 80 140 - - - 0.25 0.2 - 13 0.25 Vdc Vdc Vdc k - 4.9 7.0 0.17 - - 10 0.21 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RJA = 600C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve Version 1.0 LDTA114YET1-2/4 LESHAN RADIO COMPANY, LTD. LDTA114YET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C +12 V 75C 1 Typical Application for PNP BRTs LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0.1 Figure 6. Input Voltage versus Output Current Figure 7. Inexpensive, Unregulated Current Source Version 1.0 LDTA114YET1-3/4 LESHAN RADIO COMPANY, LTD. LDTA114YET1 SC-89 A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF ----10 _ ----10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF ----0.063 D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 ----0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS Version 1.0 LDTA114YET1-4/4 |
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